1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds ( on ) m( ? )i d (a) 13.5 @ v gs = 10v 10 20 @ v gs = 4.5v 8 product summary 30 dual n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 symbol limit units v ds 30 v gs 20 t a =25 o c10 t a =70 o c8.2 i dm 50 i s 2.3 a t a =25 o c2.1 t a =70 o c1.3 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units maximum junction-to-case a t <= 5 sec r jc 40 o c/w maximum junction-to-ambient a t <= 5 sec r ja 60 o c/w thermal resistance ratings parameter ao48 24/ mc48 24 freescale www.freescale.net.cn
2 notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 ua 30 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 10 a 13.5 v gs = 4.5 v, i d = 8 a 20 v gs = 10 v, i d = 15 a, t j = 55 o c15 forward tranconductance a g fs v ds = 15 v, i d = 10 a 40 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.7 v pulsed source current (body diode) a i sm 5 a total gate charge q g 20 gate-source charge q g s 7.0 gate-drain charge q gd 7.0 turn-on delay time t d ( on ) 20 rise time t r 9 turn-off delay time t d(off) 70 fall-time t f 20 ns drain-source on-resistance a r ds(on) m ? parameter limits unit v dd = 25 v, r l = 25 ? , i d = 1 a, v gen = 10 v v ds = 15 v, v gs = 5 v, i d = 10 a nc dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static v test conditions symbol ao48 24/ mc48 24 freescale www.freescale.net.cn freescale reserves the right to make changes without fu rther notice to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically dis itation special, consequential or incidental damages. ?typical? parameters which may be provide d in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur. should buyer purchase or use freescale products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an equal opportunity/affirmative action employer. claims any and all liability, including without lim
3 typical electrical characteristics (n-channel) figure 3. on-resistance variation with temperature figure 5. transfer characteristics figure 2. on-resistance with drain current figure 4. on-resistance variation with gate to source voltage figure 6. body diode forward voltage variation with source current and temperature figure 1. on-region characteristics 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50 -25 0 25 50 75 100 125 150 t j juncation temperature (c) normalized r ds (on) v gs = 10v i d = 10a 0 10 20 30 40 50 60 0 1234 56 v gs gate to so urce vo ltage (v) i d drain current (a) 25c 12 5 c -55c v d =5v 0 10 20 30 40 50 00.511.52 vds, drain-source volt age (v) id, drain current (a) 3.0v 6.0v 4.0v v gs = 10v 0.5 0.8 1.1 1.4 1.7 2 0 1020304050 id, drain current (a) rds(on), normalized drain-source on-resistanc e 4.5v 10v 6.0v 0 0.01 0.02 0.03 0.04 0.05 246810 vgs, gate to source voltage (v) rds(on), on-resistance (ohm) i d = 10a t a = 25 o c 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd, body diode forward voltage (v) is, reverse drain current (a) t a = 125 o c 25 o c v gs = 0v ao48 24/ mc48 24 freescale www.freescale.net.cn
4 typical electrical characteristics (n-channel) figure 11. transient th ermal response curve figure 8. capacitance characteristics figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient square wave pulse duration (s) figure 9. threshold vs ambient temperature 0 400 800 1200 1600 0 5 10 15 20 25 30 vds, drain to source voltage (v) capacitance (pf ) ciss crss coss f = 1mhz v gs = 0 v 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w ) single pulse rqja = 125c/w ta = 25c 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature ( o c) vth, gate-source thresthold voltag e (v) v ds = v gs i d = 250ma 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r qja (t) = r(t) * r qja r qja = 125 c/w t j - t a = p * r qja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 0 2 4 6 8 10 0 4 8 12 16 20 24 qg, gate charge (nc) vgs gate to source voltage ( v ) figure 7. gate charge characteristics i d =10a ao48 24/ mc48 24 freescale www.freescale.net.cn
5 package information so-8: 8lead h x 45 ao48 24/ mc48 24 freescale www.freescale.net.cn
6 ordering information ? am4910n-t1-xx ?a: analog power ? m: mosfet ? 4910: part number ? n: n-channel ? t1: tape & reel ? xx: blank: standard pf: leadfree ao48 24/ mc48 24 freescale www.freescale.net.cn
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